Vishay IRFR420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin TO-252 IRFR420TRPBF

RS-stocknr.:: 177-7553
Fabrikantnummer:: IRFR420TRPBF
Fabrikant:: Vishay

Vishay IRFR420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin TO-252 IRFR420TRPBF

Subtotaal (1 rol van 2000 eenheden)*

€ 896,00

(excl. BTW)

€ 1.084,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 29 maart 2027

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Aantal stuks	Per stuk	Per rol*
2000 +	€ 0,448	€ 896,00

*prijsindicatie

RS-stocknr.:: 177-7553
Fabrikantnummer:: IRFR420TRPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.4A
	Maximum Drain Source Voltage Vds	500V
	Series	IRFR420
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.6V
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Power Dissipation Pd	42W
	Maximum Operating Temperature	150°C
	Width	6.22mm
	Height	2.39mm
	Length	6.73mm
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.4A
	Maximum Drain Source Voltage Vds 500V
	Series IRFR420
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.6V
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Power Dissipation Pd 42W
	Maximum Operating Temperature 150°C
	Width 6.22mm
	Height 2.39mm
	Length 6.73mm
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Automotive Standard No

Vishay IRFR420 Series Power MOSFET, 500V Maximum Drain Source Voltage, 42W Maximum Power Dissipation - IRFR420TRPBF

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial and electronic equipment. It operates across a broad temperature range for demanding environments and is supplied in a compact surface-mount package suited to board-level assemblies.

Features and Benefits:

• 500V maximum drain-source voltage for high-voltage switching capability
• 3Ω Rds(on) enabling predictable conduction losses
• 2.4A continuous drain current for steady-state load handling
• 19nC gate charge supporting efficient switching transitions
• 42W maximum power dissipation for thermal performance budgeting
• 20V gate-source rating to accommodate strong gate-drive margins

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor-control front ends
• Used with isolated DC-DC converters in power systems
• Can be used for lamp and heater switching circuits
• Appropriate for rugged electronics operating at extreme temperatures

What mounting method should be used for reliable operation?

The package is a TO-252 surface-mount type, so standard SMT reflow processes and compatible land patterns are appropriate for PCB assembly.

What thermal limits must designers consider during layout?

The device dissipates up to 42W

copper area, thermal vias and adequate heat-sinking on the PCB are required to manage junction temperature within limits.

How does gate-drive choice affect switching performance?

A drive capable of approaching the 20V gate-source limit provides faster turn-on while the 19nC gate charge figure helps estimate required drive current and switching losses.

What environmental extremes can it endure?

It is specified to operate from -55°C to 150°C, allowing use in applications with wide ambient and junction temperature swings.