Vishay IRFR320 Type N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252

RS-stocknr.:: 177-7558
Fabrikantnummer:: IRFR320TRPBF
Fabrikant:: Vishay

Vishay IRFR320 Type N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252

Subtotaal (1 rol van 2000 eenheden)*

€ 936,00

(excl. BTW)

€ 1.132,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 10 september 2026

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Aantal stuks	Per stuk	Per rol*
2000 +	€ 0,468	€ 936,00

*prijsindicatie

RS-stocknr.:: 177-7558
Fabrikantnummer:: IRFR320TRPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-252
	Series	IRFR320
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Power Dissipation Pd	42W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Height	2.38mm
	Standards/Approvals	RoHS
	Length	6.73mm
	Width	6.22mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-252
	Series IRFR320
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Power Dissipation Pd 42W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Height 2.38mm
	Standards/Approvals RoHS
	Length 6.73mm
	Width 6.22mm
	Automotive Standard No

IRFR320, IRFU320, SiHFR320, SiHFU320, Power MOSFET

Vishay IRFR320 Series Power MOSFET, 400V Drain-Source Voltage, 3.1A Continuous Drain Current - IRFR320TRPBF

This power MOSFET is a high-voltage N-channel device designed for switching and amplification tasks in industrial electronics. It operates as an enhancement-mode transistor suited to surface-mount assemblies and supports demanding electrical environments where controlled high-voltage switching is required.

Features and Benefits:

• 400V drain rating enables high-voltage switching applications • 3.1A continuous drain capacity supports moderate current loads • 1.8Ω low Rds(on) minimises conduction losses at rated conditions • 20nC typical gate charge allows predictable switching dynamics • 42W maximum power dissipation permits significant thermal loading • -55°C to 150°C operating range ensures wide temperature resilience

Applications

• Suitable for flyback and forward converters in power supplies • Ideal for industrial motor control stages with high-voltage rails • Used for high-voltage lighting and ballast switching circuits • Can be used for protection circuits requiring robust blocking voltage

What package type should I expect for surface mounting?

The device is supplied in a TO-252 package configured for solder-down mounting to a PCB and thermal plane.

What gate voltage limits must I observe during design?

Gate excursions must remain within ±20V relative to the source to avoid exceeding the gate-source rating.

How should thermal management be approached on a board?

Use adequate copper area and thermal vias under the TO-252 land to dissipate up to the stated 42W power, considering derating for ambient temperature and airflow.

What atmosphere and approval considerations apply for procurement?

The component conforms to RoHS material restrictions for lead‑free system integration.