Vishay IRFR320 N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252 IRFR320TRPBF

RS-stocknr.:: 812-0626
Fabrikantnummer:: IRFR320TRPBF
Fabrikant:: Vishay

Vishay IRFR320 N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252 IRFR320TRPBF

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Subtotaal (1 verpakking van 10 eenheden)*

€ 9,64

(excl. BTW)

€ 11,66

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 0,964	€ 9,64
100 - 240	€ 0,905	€ 9,05
250 - 490	€ 0,866	€ 8,66
500 - 990	€ 0,77	€ 7,70
1000 +	€ 0,721	€ 7,21

*prijsindicatie

RS-stocknr.:: 812-0626
Fabrikantnummer:: IRFR320TRPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-252
	Series	IRFR320
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Power Dissipation Pd	42W
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Height	2.38mm
	Standards/Approvals	RoHS
	Width	6.22mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-252
	Series IRFR320
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -20V, +20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Power Dissipation Pd 42W
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Height 2.38mm
	Standards/Approvals RoHS
	Width 6.22mm
	Automotive Standard No

Vishay IRFR320 Series Power MOSFET, 400V Drain Source Voltage, 3.1A Continuous Drain Current - IRFR320TRPBF

This power MOSFET is a high-voltage switching transistor intended for surface-mount board assemblies in power conversion and control circuits. It operates as an N-channel enhancement device and is designed to handle elevated drain-to-source voltages and moderate continuous currents, making it suitable for switching and energy-management roles in industrial and consumer electronics.

Features and Benefits:

• 400V maximum drain-to-source voltage enables high-voltage switching capability
• 3.1A continuous drain current supports moderate load currents
• 1.8Ω maximum Rds(on) reduces conduction losses under load
• 42W maximum power dissipation allows sustained thermal handling
• 20nC typical gate charge enables predictable switching behaviour
• 20V gate-source limit ensures compatibility with standard gate drivers

Applications

• Suitable for switch-mode power supplies and converters
• Ideal for motor control in low-power systems
• Used for primary-side power switching in industrial equipment
• Can be used for electronic load protection circuits
• Appropriate for high-voltage relay replacement on boards

What thermal range can be expected for operation?

The device is specified to function between -55°C and 150°C, permitting use across extended temperature environments.

How is the component packaged for assembly?

It is supplied in a three-pin TO-252 surface-mount package suitable for automated PCB placement.

What gate drive considerations are necessary?

Drivers should respect a maximum gate-source rating of 20V and account for the typical 20nC gate charge when sizing drive current and switching speed.

Is this suitable for automotive-grade designs?

The part does not meet automotive standards, so it is not intended for certified automotive system use.