Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89 VP2450N8-G
- RS-stocknr.:
- 177-9737
- Fabrikantnummer:
- VP2450N8-G
- Fabrikant:
- Microchip
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,06
(excl. BTW)
€ 9,755
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.920 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 1,612 | € 8,06 |
*prijsindicatie
- RS-stocknr.:
- 177-9737
- Fabrikantnummer:
- VP2450N8-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 160mA | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | VP2450 | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.6 mm | |
| Standards/Approvals | No | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 160mA | ||
Maximum Drain Source Voltage Vds 500V | ||
Series VP2450 | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Width 2.6 mm | ||
Standards/Approvals No | ||
Length 4.6mm | ||
Height 1.6mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
Gerelateerde Links
- Microchip VP2450 P-Channel MOSFET 500 V, 3-Pin SOT-89 VP2450N8-G
- Microchip VN2450 Silicon N-Channel MOSFET 500 V, 3-Pin SOT-89 VN2450N8-G
- Infineon SIPMOS® P-Channel MOSFET 250 V, 3-Pin SOT-89 BSS192PH6327FTSA1
- Nexperia BST39TA NPN Transistor 350 V, 3-Pin SOT-89
- Microchip TP2510 Silicon P-Channel MOSFET 100 V, 3-Pin SOT-89 TP2510N8-G
- Diodes Inc DXT5551-13 NPN Transistor 160 V, 3-Pin SOT-89
- Diodes Inc 2DA1971-7 PNP Transistor -400 V, 3-Pin SOT-89
- Nexperia Dual P-Channel MOSFET 50 V115