Microchip TN2510 Type N-Channel Single MOSFETs, 0.73 A, 100 V Enhancement, 3-Pin SOT-89 TN2510N8-G
- RS-stocknr.:
- 649-584
- Fabrikantnummer:
- TN2510N8-G
- Fabrikant:
- Microchip
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*prijsindicatie
- RS-stocknr.:
- 649-584
- Fabrikantnummer:
- TN2510N8-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 0.73A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-89 | |
| Series | TN2510 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 0.73A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-89 | ||
Series TN2510 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
The Microchip Low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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