Vishay IRF740 Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF

RS-stocknr.:: 178-0812
Fabrikantnummer:: IRF740PBF
Fabrikant:: Vishay

Vishay IRF740 Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 56,05

(excl. BTW)

€ 67,80

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

650 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 1.000 stuk(s) vanaf 25 september 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,121	€ 56,05
100 - 200	€ 0,964	€ 48,20
250 +	€ 0,829	€ 41,45

*prijsindicatie

RS-stocknr.:: 178-0812
Fabrikantnummer:: IRF740PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-220AB
	Series	IRF740
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	9.01mm
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-220AB
	Series IRF740
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 9.01mm
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Automotive Standard No

Vishay IRF740 Series Power MOSFET, 400V Drain Source Voltage, 10A Continuous Drain Current - IRF740PBF

This power MOSFET is a high-voltage N-channel enhancement device designed for use in industrial switching and power-control circuits. It operates across a wide temperature range and is supplied in a through-hole TO-220AB package suitable for assemblies where robust mounting and straightforward heat-sinking are required. The device is intended for applications demanding sustained current handling and elevated voltage tolerance.

Features and Benefits:

• 400V drain-source rating for high-voltage switching applications • 10A continuous drain current to support moderate power loads • 125W power dissipation for reliable thermal performance • 550mΩ RDS(on) enabling efficient conduction in switching roles • 63nC typical gate charge to inform drive requirements • 20V maximum gate-source voltage for gate-drive margin

Applications

• Suitable for switch-mode power supply primary switching • Ideal for motor-control inverter stages in automation systems • Used for high-voltage power converters in industrial equipment • Can be used for power management in test and measurement rigs

What mounting method does the device require for heat management?

It is a through-hole component in a TO-220AB package, allowing direct attachment to heatsinks using a fastener and insulating hardware if required.

What temperature extremes can it tolerate during operation?

The device is specified to operate down to -55°C and up to 150°C, making it suitable for a wide range of environmental conditions.

What should be considered when designing the gate drive?

The maximum gate-source voltage is 20V and the typical gate charge is 63nC at VGS, so the driver must supply sufficient charge and respect the 20V limit to avoid gate overstress.

Is the device compliant with common environmental material standards?

The component conforms to RoHS directives on restricted hazardous substances.