Vishay IRF740 N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF

RS-stocknr.:: 178-0812
Fabrikantnummer:: IRF740PBF
Fabrikant:: Vishay

Vishay IRF740 N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 56,05

(excl. BTW)

€ 67,80

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Plus verzending 1.000 stuk(s) vanaf 25 september 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,121	€ 56,05
100 - 200	€ 0,964	€ 48,20
250 +	€ 0,829	€ 41,45

*prijsindicatie

RS-stocknr.:: 178-0812
Fabrikantnummer:: IRF740PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Series	IRF740
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	2V
	Maximum Operating Temperature	150°C
	Length	10.41mm
	Standards/Approvals	RoHS
	Width	4.7mm
	Height	9.01mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Series IRF740
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 2V
	Maximum Operating Temperature 150°C
	Length 10.41mm
	Standards/Approvals RoHS
	Width 4.7mm
	Height 9.01mm
	Automotive Standard No

Vishay IRF740 Series Power MOSFET, 400V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRF740PBF

This power MOSFET is a high-voltage N‑channel transistor designed for switching and amplification tasks in power electronics. It operates across a wide temperature range and is supplied in a through-hole TO-220AB package for conventional board mounting and heat‑sinking. The device supports high drain-source voltage environments and is suitable where robust switching capability and manageable gate‑drive requirements are needed.

Features and Benefits:

• 400V drain-source rating enables high‑voltage switching capability
• 10A continuous drain current supports substantial load currents
• 125W power dissipation allows sustained thermal handling
• 550 mΩ Rds(on) provides predictable conduction losses
• 63 nC typical gate charge reduces switching drive energy
• 20V maximum gate-source permits common gate‑drive voltages

Applications

• Suitable for switch‑mode power supply output stages
• Ideal for high‑voltage DC‑DC converter switching
• Used with industrial motor drives requiring high Vds
• Can be used for inverter circuits in power electronics
• Suitable for general‑purpose high‑voltage switching

What thermal range can it tolerate in demanding environments?

The device is rated for operation from -55 °C up to 150 °C, enabling use in a wide range of thermal conditions.

How is the device mounted and cooled in typical designs?

It uses a TO-220AB through‑hole package that accommodates standard heatsinks and screws for thermal management and chassis attachment.

What gate‑drive limitations should designers observe?

The gate must be kept within ±20V maximum relative to source to avoid damage and to maintain correct enhancement‑mode operation.

What channel characteristics affect switching polarity?

It is an N‑channel enhancement‑mode device, meaning it requires a positive gate‑source voltage to conduct.