Vishay IRFB9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-220AB

RS-stocknr.:: 178-0821
Fabrikantnummer:: IRFB9N60APBF
Fabrikant:: Vishay

Vishay IRFB9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-220AB

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Subtotaal (1 tube van 50 eenheden)*

€ 82,20

(excl. BTW)

€ 99,45

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 10 september 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,644	€ 82,20
100 - 200	€ 1,398	€ 69,90
250 +	€ 1,315	€ 65,75

*prijsindicatie

RS-stocknr.:: 178-0821
Fabrikantnummer:: IRFB9N60APBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	9.2A
	Maximum Drain Source Voltage Vds	600V
	Series	IRFB9N60A
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	750mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.5V
	Typical Gate Charge Qg @ Vgs	49nC
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Standards/Approvals	RoHS
	Height	9.01mm
	Length	10.41mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 9.2A
	Maximum Drain Source Voltage Vds 600V
	Series IRFB9N60A
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 750mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.5V
	Typical Gate Charge Qg @ Vgs 49nC
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Standards/Approvals RoHS
	Height 9.01mm
	Length 10.41mm
	Automotive Standard No

Datasheet

Vishay IRFB9N60A Series Power MOSFET, 600V Drain-Source Voltage, 9.2A Continuous Drain Current - IRFB9N60APBF

This power MOSFET is a high-voltage N-channel semiconductor device intended for switching and power-conversion roles in industrial electronics. It operates as an enhancement-mode transistor and is supplied in a through-hole TO-220AB package suitable for solder-mount applications. The device is designed for use where robust voltage handling and moderate current capability are required within equipment assemblies.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 9.2A continuous drain current supports sustained load driving • 750mΩ Rds(on) reduces conduction losses in low-current circuits • 170W power dissipation allows substantial thermal headroom • 49nC typical gate charge at Vgs 30V facilitates predictable drive timing • Rated to 150°C maximum operating temperature tolerates elevated junction conditions

Applications

• Suitable for line-frequency switch-mode power supplies • Ideal for industrial motor drive gate stages • Used with high-voltage DC-DC converter topologies • Can be used for power braking and snubber networks • Used for lab and prototyping where through-hole mounting is preferred

What gate drive constraints should I consider for reliable switching?

Drive voltages should not exceed 30V relative to the source and gate charge of about 49nC at that level defines the required driver current and switching timing.

How does thermal management influence performance under continuous load?

With 170W Pd, heat-sinking is necessary to maintain junction temperature below the 150°C limit and to achieve the specified continuous drain current without thermal derating.

What mounting method is recommended for mechanically stable connections?

Through-hole solder mounting in the TO-220AB package provides robust mechanical and thermal contact suitable for repeated thermal cycles.

What environmental temperature range can it operate within?

It is specified for operation down to -55°C and up to 150°C, allowing use across wide ambient conditions if thermal design is appropriate.