Vishay IRFB9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFB9N60APBF

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RS-stocknr.:
178-0821
Fabrikantnummer:
IRFB9N60APBF
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

9.2A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220AB

Series

IRFB9N60A

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

170W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

49nC

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

4.7mm

Height

9.01mm

Length

10.41mm

Automotive Standard

No

Vishay IRFB9N60A Series Power MOSFET, 600V Drain Source Voltage, 9.2A Continuous Drain Current - IRFB9N60APBF


This power MOSFET is a high-voltage N-channel transistor intended for switching and amplification tasks in industrial electronics. It operates as an enhancement-mode device and is supplied in a TO-220AB through-hole package suitable for heat-sink mounting. The component is designed to function across a broad temperature span, making it appropriate for demanding thermal environments.

Features and Benefits:


• 600V drain-source rating enables high-voltage switching
• 9.2A continuous drain current supports moderate load currents
• 750mΩ Rds(on) reduces conduction losses under load
• 170W maximum dissipation permits high-power handling
• 49nC typical gate charge allows controlled switching dynamics
• 30V gate tolerance supports standard gate-drive voltages

Applications


• Suitable for offline power supplies and SMPS
• Ideal for inverter and motor-drive stages
• Used with high-voltage DC-DC converter designs
• Can be used for inductive load switching in industrial equipment
• Used for power-stage prototypes on through-hole development boards

What thermal extremes can the device tolerate in operation?


It is specified to operate from -55°C up to 150°C ambient, accommodating low-temperature starts and elevated thermal stress.

How does the package support mounting and cooling in systems?


The TO-220AB outline permits secure through-hole fixation and direct attachment to a heatsink for improved thermal conduction.

What gate-drive considerations are necessary for switching performance?


Drive voltages should remain within ±30V of gate-to-source

the 49nC gate charge influences required driver current for targeted switching speed.

Is the device suitable for automotive-grade applications?


It is not characterised to automotive standards and therefore is recommended for industrial rather than automotive-certified deployments.

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