Vishay IRFS9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF

RS-stocknr.:: 178-0850
Fabrikantnummer:: IRFS9N60APBF
Fabrikant:: Vishay

Vishay IRFS9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF

Subtotaal (1 tube van 50 eenheden)*

€ 91,80

(excl. BTW)

€ 111,10

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 550 stuk(s) vanaf 17 juli 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 +	€ 1,836	€ 91,80

*prijsindicatie

RS-stocknr.:: 178-0850
Fabrikantnummer:: IRFS9N60APBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	9.2A
	Maximum Drain Source Voltage Vds	600V
	Series	IRFS9N60A
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	750mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	49nC
	Maximum Operating Temperature	150°C
	Height	4.83mm
	Width	9.65mm
	Standards/Approvals	RoHS
	Length	10.67mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 9.2A
	Maximum Drain Source Voltage Vds 600V
	Series IRFS9N60A
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 750mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 49nC
	Maximum Operating Temperature 150°C
	Height 4.83mm
	Width 9.65mm
	Standards/Approvals RoHS
	Length 10.67mm
	Automotive Standard No

Datasheet

Vishay IRFS9N60A Series Power MOSFET, 600V Maximum Drain Source Voltage, 9.2A Maximum Continuous Drain Current - IRFS9N60APBF

This power MOSFET is a high-voltage N-channel device designed for switching and power conversion tasks in industrial and electronic systems. It operates across a wide temperature range and is intended for surface-mount integration on power assemblies where high-voltage capability and robust thermal handling are required.

Features and Benefits:

• 600V drain withstand voltage enabling high-voltage switching
• 9.2 A continuous drain current for steady load handling
• 750 mΩ on-resistance minimises conduction losses
• 49 nC typical gate charge for predictable switching energy
• 170W power dissipation supports elevated power throughput
• 150 °C maximum junction temperature for high-temperature operation

Applications

• Suitable for SMPS primary switch functions in power supplies
• Ideal for high-voltage inverter stages in industrial drives
• Used for switch-mode motor controllers handling elevated voltages
• Can be used for power-factor correction front-end circuits

What mounting format does it require for assembly?

It is supplied for surface mounting in a TO-263 package with three pins to suit standard heat-sinked PCB footprints.

What gate limits must be observed to avoid damage?

The gate must not be driven beyond ±30V relative to source to prevent gate oxide overstress.

How does thermal management influence performance?

With 170W rated dissipation and a 150 °C maximum junction temperature, adequate PCB copper and heatsinking are needed to maintain junction temperature under heavy load.

What environmental specification affects materials selection?

The component conforms to RoHS requirements, influencing soldering and material choices in assembly.