Vishay IRF9Z14 Type P-Channel Power MOSFET, -6.7 A, -60 V Enhancement, 3-Pin TO-220AB IRF9Z14PBF

RS-stocknr.:: 178-0838
Fabrikantnummer:: IRF9Z14PBF
Fabrikant:: Vishay

Vishay IRF9Z14 Type P-Channel Power MOSFET, -6.7 A, -60 V Enhancement, 3-Pin TO-220AB IRF9Z14PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 47,30

(excl. BTW)

€ 57,25

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,946	€ 47,30
100 - 200	€ 0,804	€ 40,20
250 +	€ 0,709	€ 35,45

*prijsindicatie

RS-stocknr.:: 178-0838
Fabrikantnummer:: IRF9Z14PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	-6.7A
	Maximum Drain Source Voltage Vds	-60V
	Series	IRF9Z14
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-5.5V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	12nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	43W
	Maximum Operating Temperature	175°C
	Height	9.01mm
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id -6.7A
	Maximum Drain Source Voltage Vds -60V
	Series IRF9Z14
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -5.5V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 12nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 43W
	Maximum Operating Temperature 175°C
	Height 9.01mm
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Automotive Standard No

Datasheet

Vishay IRF9Z14 Series Power MOSFET, -60V Maximum Drain Source Voltage, -6.7A Maximum Continuous Drain Current - IRF9Z14PBF

This power MOSFET is a P‑channel enhancement device intended for switching and control in electronic systems. It is supplied in a through‑hole TO‑220AB package and is suited to applications that require a discrete transistor capable of handling moderate currents and voltages while operating across a wide temperature range.

Features and Benefits:

• -60V drain‑source rating enables high‑voltage switching
• -6.7A continuous drain current supports medium‑power loads
• 500mΩ Rds(on) reduces conduction losses under load
• 12nC typical gate charge allows reasonably fast switching
• 43W power dissipation manages thermal load in controlled environments
• 20V maximum gate‑source withstand simplifies gate‑drive design

Applications

• Suitable for DC motor high‑side switching in automation systems
• Ideal for power control in industrial electronics modules
• Used with thermal management assemblies in mechanical drives
• Can be used for load switching in electrical distribution panels

What temperature extremes can the device tolerate in operation?

It is rated to operate between -55°C and 175°C, allowing use in environments with wide thermal variation.

How many electrical connections does the package provide for assembly?

The through‑hole TO‑220AB format presents three pins for straightforward PCB or chassis mounting.

What gate‑drive considerations should be observed for switching?

The gate‑source maximum is 20V and the typical gate charge is 12nC, so drive circuits should limit Vgs and provide sufficient current to charge the gate at the intended switching speed.

Are there any environmental or regulatory material standards noted for the part?

The device meets RoHS requirements for restricted substances in electronic components.