Vishay IRF9Z14 Type P-Channel Power MOSFET, -6.7 A, -60 V Enhancement, 3-Pin TO-220AB IRF9Z14PBF

RS-stocknr.:: 542-9478
Fabrikantnummer:: IRF9Z14PBF
Fabrikant:: Vishay

Vishay IRF9Z14 Type P-Channel Power MOSFET, -6.7 A, -60 V Enhancement, 3-Pin TO-220AB IRF9Z14PBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 eenheid)*

€ 1,74

(excl. BTW)

€ 2,11

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

355 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 340 stuk(s) vanaf 14 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk
1 - 9	€ 1,74
10 - 49	€ 1,57
50 - 99	€ 1,38
100 - 249	€ 1,30
250 +	€ 1,21

*prijsindicatie

RS-stocknr.:: 542-9478
Fabrikantnummer:: IRF9Z14PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-6.7A
	Maximum Drain Source Voltage Vds	-60V
	Series	IRF9Z14
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	43W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-5.5V
	Maximum Operating Temperature	175°C
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -6.7A
	Maximum Drain Source Voltage Vds -60V
	Series IRF9Z14
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 43W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -5.5V
	Maximum Operating Temperature 175°C
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Vishay IRF9Z14 Series Power MOSFET, 60V Drain Source Voltage, 43W Power Dissipation - IRF9Z14PBF

This power MOSFET is a P-channel device designed for switching and amplification tasks in medium-power electronics. It operates with negative drain-source and gate-source polarities and is supplied in a TO-220AB through-hole package suited to boards requiring robust mounting and thermal interfacing. The component complies with RoHS and is intended for applications that demand defined gate control and reliable current handling within constrained thermal environments.

Features and Benefits:

• Rated for -60V drain-source voltage enabling higher-voltage P-channel designs
• Maximum continuous drain current of -6.7A supports substantial load currents
• Maximum power dissipation 43W allows sustained thermal loading
• Typical gate charge 12 nC reduces switching energy and transition losses
• Low RDS(on) 500 mΩ minimises conduction losses at operating conditions
• Tolerant operating range -55 °C to 175 °C for elevated-temperature systems

Applications

• Suitable for audio amplifier power-stage switching duties
• Ideal for discrete high-side switching in power supplies
• Used with through-hole layouts requiring firm heat-sink attachment
• Can be used for motor driver circuits needing a P-channel configuration
• Suitable for replacement in designs needing 60V P-channel devices

What is the package and mounting style for board integration?

The device is supplied in a TO-220AB package with three pins for through-hole mounting, facilitating straightforward soldered connections and mechanical stability.

How does the gate voltage limit affect control circuitry?

The maximum gate-source voltage rating is 20V, so driver circuits must keep gate swings within this limit to avoid damage.

What thermal considerations should I observe during PCB design?

With 43W maximum dissipation, designers should provide a heat sink or adequate copper area and consider thermal vias to maintain junction temperatures.

How does channel type and mode influence switching behaviour?

As a P-channel enhancement device, it requires a gate voltage more positive relative to the source to turn off and more negative relative to the source to switch on, suitable for high-side arrangements.