onsemi N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 FCMT180N65S3

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RS-stocknr.:
178-4240
Fabrikantnummer:
FCMT180N65S3
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Package Type

Power88

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

8mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Length

8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Land van herkomst:
PH
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF)
Optimized Capacitance
Typ. RDS(on) = 152 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting

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