onsemi NVH Type N-Channel MOSFET, 50 A, 650 V N, 4-Pin TO-247-4L NVH4L023N065M3S
- RS-stocknr.:
- 327-806
- Fabrikantnummer:
- NVH4L023N065M3S
- Fabrikant:
- onsemi
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€ 17,13
(excl. BTW)
€ 20,73
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 17,13 |
| 10 - 99 | € 15,41 |
| 100 + | € 14,21 |
*prijsindicatie
- RS-stocknr.:
- 327-806
- Fabrikantnummer:
- NVH4L023N065M3S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4L | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Gate Source Voltage Vgs | ±22 V | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4L | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Gate Source Voltage Vgs ±22 V | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 23 mΩ device in the M3S TO-247-4L package. It is designed for high-efficiency, high-performance power conversion, providing low on-resistance and fast switching. Ideal for applications in automotive, industrial, and renewable energy systems, this MOSFET ensures reliable operation under demanding conditions.
Devices are Pb Free and are RoHS Compliant
Qualified for Automotive According to AEC Q101
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