onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTPF082N65S3F
- RS-stocknr.:
- 178-4602
- Fabrikantnummer:
- NTPF082N65S3F
- Fabrikant:
- onsemi
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- RS-stocknr.:
- 178-4602
- Fabrikantnummer:
- NTPF082N65S3F
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Length | 10.63mm | |
| Height | 16.12mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Length 10.63mm | ||
Height 16.12mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features
700 V @ TJ = 150 oC
Ultra Low Gate Charge (Typ. Qg = 70 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)
Optimized Capacitance
Excellent body diode performance (low Qrr, robust body diode)
Typ. RDS(on) = 70 mΩ
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge Circuit
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
Solar / UPS
EV charger
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