Infineon OptiMOS 5 N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC039N06NSATMA1

RS-stocknr.:: 178-7484
Fabrikantnummer:: BSC039N06NSATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC039N06NSATMA1

Subtotaal (5000 eenheden, op een rol van 5000)*

€ 2.915,00

(excl. BTW)

€ 3.525,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

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Aantal stuks	Per stuk	Per rol*
5000 +	€ 0,583	€ 2.915,00

*prijsindicatie

RS-stocknr.:: 178-7484
Fabrikantnummer:: BSC039N06NSATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS 5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.9mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	27nC
	Maximum Power Dissipation Pd	69W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	5.35mm
	Standards/Approvals	No
	Height	1.1mm
	Length	6.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS 5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.9mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 27nC
	Maximum Power Dissipation Pd 69W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 5.35mm
	Standards/Approvals No
	Height 1.1mm
	Length 6.1mm
	Automotive Standard No

BSC039N06NS OptiMOS Power-Transistor

Vrijgesteld

Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC039N06NSATMA1

This MOSFET is a compact N-channel switching device designed for high-current power applications, offering robust operation across a wide temperature range. It is intended for surface‑mount assembly and delivers efficient conduction and switching performance for demanding electronic systems.

Features and Benefits:

• Very low on-resistance 5.9 mΩ enabling reduced conduction losses
• High continuous drain current 100A supporting heavy load handling
• 60V drain-source rating for robust voltage headroom
• Low gate charge 27 nC allowing faster switching and lower drive energy
• Maximum power dissipation 69W permitting sustained thermal loading

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for motor‑drive stages requiring high continuous current
• Used with DC-DC converters in telecommunications equipment
• Can be used for server and datacentre power distribution modules
• Suitable for industrial switching and power‑management assemblies

What thermal extremes can the device tolerate in operation?

It is specified to function from -55 °C up to 150 °C enabling use in harsh thermal environments.

What package and mounting method does it require for board assembly?

The component is supplied in an 8‑pin TDSON package designed for surface‑mount placement and solder reflow processes.

What is the channel mode and how does it affect switching?

It uses an enhancement‑mode N‑channel configuration which requires a positive gate‑source drive to conduct and offers conventional low‑side and high‑side switching topology compatibility.

What gate‑drive voltage limit must be observed during design?

The maximum permissible gate‑to‑source voltage is 20V and designs should keep gate excursions within this threshold to avoid damage.