Vishay TrenchFET Type P-Channel MOSFET, 3.1 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-E3
- RS-stocknr.:
- 180-7719
- Fabrikantnummer:
- SI2301CDS-T1-E3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 8,65
(excl. BTW)
€ 10,475
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 325 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,346 | € 8,65 |
| 250 - 600 | € 0,339 | € 8,48 |
| 625 - 1225 | € 0,235 | € 5,88 |
| 1250 - 2475 | € 0,177 | € 4,43 |
| 2500 + | € 0,152 | € 3,80 |
*prijsindicatie
- RS-stocknr.:
- 180-7719
- Fabrikantnummer:
- SI2301CDS-T1-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 112mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.64 mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 112mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.64 mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 8V. It has drain-source resistance of 112mohm at a gate-source voltage of 4.5V. It has continuous drain current of 3.1A and maximum power dissipation of 1.6W. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
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