Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- RS-stocknr.:
- 710-3238
- Fabrikantnummer:
- SI2301CDS-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 6,16
(excl. BTW)
€ 7,46
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Plus verzending 200 stuk(s) vanaf 19 januari 2026
- Plus verzending 240 stuk(s) vanaf 19 januari 2026
- Laatste verzending 2.680 stuk(s) vanaf 26 januari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,308 | € 6,16 |
| 200 - 480 | € 0,247 | € 4,94 |
| 500 - 980 | € 0,185 | € 3,70 |
| 1000 - 1980 | € 0,154 | € 3,08 |
| 2000 + | € 0,139 | € 2,78 |
*prijsindicatie
- RS-stocknr.:
- 710-3238
- Fabrikantnummer:
- SI2301CDS-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | Si2301CDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 112mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 860mW | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series Si2301CDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 112mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 860mW | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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