Vishay TrenchFET Type N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3

RS-stocknr.:: 180-7752
Fabrikantnummer:: SI2308BDS-T1-E3
Fabrikant:: Vishay

Vishay TrenchFET Type N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3

Subtotaal (1 verpakking van 20 eenheden)*

€ 8,48

(excl. BTW)

€ 10,26

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Wordt opgeheven

Laatste 1.820 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
20 +	€ 0,424	€ 8,48

*prijsindicatie

RS-stocknr.:: 180-7752
Fabrikantnummer:: SI2308BDS-T1-E3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	60V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.192Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	1.66W
	Typical Gate Charge Qg @ Vgs	2.3nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Width	2.64 mm
	Height	1.12mm
	Standards/Approvals	IEC 61249-2-21
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 60V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.192Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 1.66W
	Typical Gate Charge Qg @ Vgs 2.3nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Width 2.64 mm
	Height 1.12mm
	Standards/Approvals IEC 61249-2-21
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 156mohm at a gate-source voltage of 10V. It has a maximum power rating of 1.66W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery Switch

• DC/DC Converter

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested