Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SO-8 SI4946BEY-T1-E3

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RS-stocknr.:
180-7732
Fabrikantnummer:
SI4946BEY-T1-E3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.052Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.2nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.7W

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Length

5mm

Width

4 mm

Height

1.75mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Number of Elements per Chip

2

Automotive Standard

No

Vishay MOSFET


The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 60V. It has drain-source resistance of 41mohm at a gate-source voltage of 10V. It has continuous drain current of 6.5A and a maximum power rating of 3.7W. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

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