Vishay Single 1 Type N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8 SIR882ADP-T1-GE3

RS-stocknr.:: 180-7871
Fabrikantnummer:: SIR882ADP-T1-GE3
Fabrikant:: Vishay

Vishay Single 1 Type N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8 SIR882ADP-T1-GE3

Subtotaal (1 verpakking van 5 eenheden)*

€ 13,72

(excl. BTW)

€ 16,60

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Wordt opgeheven

Laatste 5.800 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
5 +	€ 2,744	€ 13,72

*prijsindicatie

RS-stocknr.:: 180-7871
Fabrikantnummer:: SIR882ADP-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0087Ω
	Typical Gate Charge Qg @ Vgs	19.5nC
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.12mm
	Width	5.26 mm
	Length	6.25mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 100V
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0087Ω
	Typical Gate Charge Qg @ Vgs 19.5nC
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.12mm
	Width 5.26 mm
	Length 6.25mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 8.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 60A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET for fast switching

Applications

• DC/DC primary side switch

• Industrial sites

• Telecom/server 48V, full/half-bridge DC/DC

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested