Fabrikantnummer

Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3

RS-stocknr.:: 180-7972
Fabrikantnummer:: SQJ457EP-T1_GE3
Fabrikant:: Vishay

Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 20 eenheden)*

€ 14,70

(excl. BTW)

€ 17,78

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

2.720 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
20 - 80	€ 0,735	€ 14,70
100 - 180	€ 0,551	€ 11,02
200 - 480	€ 0,486	€ 9,72
500 - 980	€ 0,473	€ 9,46
1000 +	€ 0,462	€ 9,24

*prijsindicatie

RS-stocknr.:: 180-7972
Fabrikantnummer:: SQJ457EP-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PowerPAK SO-8L
	Series	SQJ
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.025Ω
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Power Dissipation Pd	68W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Standards/Approvals	AEC-Q101
	Length	6.15mm
	Height	1.14mm
	Width	5.13 mm
	Number of Elements per Chip	1
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 60V
	Package Type PowerPAK SO-8L
	Series SQJ
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.025Ω
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Power Dissipation Pd 68W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Standards/Approvals AEC-Q101
	Length 6.15mm
	Height 1.14mm
	Width 5.13 mm
	Number of Elements per Chip 1
	Automotive Standard AEC-Q101

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• DC/DC primary switches

• Load switches

• Power management

Certifications

• AEC-Q101 qualified

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested