Vishay TrenchFET Type P-Channel MOSFET, 19.7 A, 30 V Enhancement, 8-Pin SO-8 SI4425DDY-T1-GE3

RS-stocknr.:: 180-8062
Fabrikantnummer:: SI4425DDY-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 19.7 A, 30 V Enhancement, 8-Pin SO-8 SI4425DDY-T1-GE3

Subtotaal (1 verpakking van 20 eenheden)*

€ 5,28

(excl. BTW)

€ 6,38

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 2.780 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
20 +	€ 0,264	€ 5,28

*prijsindicatie

RS-stocknr.:: 180-8062
Fabrikantnummer:: SI4425DDY-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19.7A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	16.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	3.6W
	Typical Gate Charge Qg @ Vgs	27nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5mm
	Width	6.2 mm
	Height	1.75mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19.7A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 16.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 3.6W
	Typical Gate Charge Qg @ Vgs 27nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5mm
	Width 6.2 mm
	Height 1.75mm
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 9.8mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5.7W and continuous drain current of 19.7A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Desktop PCs

• Load switches

• Notebook PCs

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested