Fabrikantnummer

Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3

RS-stocknr.:: 180-7948
Fabrikantnummer:: SI4447ADY-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 20 eenheden)*

€ 10,76

(excl. BTW)

€ 13,02

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 20 stuk(s) vanaf 29 december 2025
Plus verzending 3.240 stuk(s) vanaf 05 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
20 - 180	€ 0,538	€ 10,76
200 - 480	€ 0,452	€ 9,04
500 - 980	€ 0,431	€ 8,62
1000 - 1980	€ 0,409	€ 8,18
2000 +	€ 0,383	€ 7,66

*prijsindicatie

RS-stocknr.:: 180-7948
Fabrikantnummer:: SI4447ADY-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	62mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	11.8nC
	Maximum Power Dissipation Pd	2.7W
	Maximum Operating Temperature	150°C
	Length	5mm
	Width	6.2 mm
	Standards/Approvals	No
	Height	1.75mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 40V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 62mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 11.8nC
	Maximum Power Dissipation Pd 2.7W
	Maximum Operating Temperature 150°C
	Length 5mm
	Width 6.2 mm
	Standards/Approvals No
	Height 1.75mm
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 45mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 7.2A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

• Notebook PCs

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested