Vishay Single 1 N-Channel MOSFET, 50 A, 60 V TO-220AB IRLZ44PBF
- RS-stocknr.:
- 180-8367
- Fabrikantnummer:
- IRLZ44PBF
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 180-8367
- Fabrikantnummer:
- IRLZ44PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 50 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Package Type | TO-220AB | |
| Automotive Standard | No | |
| Height | 6.48 mm | |
| Length | 14.4 mm | |
| Maximum Drain Source Resistance (Rds) | 0.028 Ω | |
| Maximum Gate Source Voltage (Vgs) | 10 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 150 W | |
| Minimum Operating Temperature | -55 °C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Typical Gate Charge (Qg) @ Vgs | 66 nC | |
| Width | 10.52 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 50 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Package Type TO-220AB | ||
Automotive Standard No | ||
Height 6.48 mm | ||
Length 14.4 mm | ||
Maximum Drain Source Resistance (Rds) 0.028 Ω | ||
Maximum Gate Source Voltage (Vgs) 10 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 150 W | ||
Minimum Operating Temperature -55 °C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Typical Gate Charge (Qg) @ Vgs 66 nC | ||
Width 10.52 mm | ||
- Land van herkomst:
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220AB-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 10V. It has a drain-source resistance of 28mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 150W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Lead (Pb) free component
• Logic-level gate drive
• Operating temperature ranges between -55°C and 175°C
• RDS (on) specified at VGS = 4V and 5V
• Simple drive requirements
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
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