Vishay IRFZ48R Type N-Channel Power MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF

RS-stocknr.:: 281-6035
Artikelnummer Distrelec:: 171-17-666
Fabrikantnummer:: IRFZ48RPBF
Fabrikant:: Vishay

Vishay IRFZ48R Type N-Channel Power MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF

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Subtotaal (1 tube van 1000 eenheden)*

€ 1.308,00

(excl. BTW)

€ 1.583,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

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Aantal stuks	Per stuk	Per tube*
1000 - 1000	€ 1,308	€ 1.308,00
2000 - 4000	€ 1,21	€ 1.210,00
5000 +	€ 1,125	€ 1.125,00

*prijsindicatie

RS-stocknr.:: 281-6035
Artikelnummer Distrelec:: 171-17-666
Fabrikantnummer:: IRFZ48RPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	60V
	Series	IRFZ48R
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.018Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	110nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	2V
	Maximum Power Dissipation Pd	190W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 60V
	Series IRFZ48R
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.018Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 110nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 2V
	Maximum Power Dissipation Pd 190W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFZ48RPBF

Land van herkomst:: CN

Vishay IRFZ48R Series Power MOSFET, 60V Drain Source Voltage, 50A Continuous Drain Current - IRFZ48RPBF

This power MOSFET is a through‑hole N‑channel enhancement device designed for switching and amplification tasks in industrial electronic systems. It operates within moderate voltage ranges and is suited to applications requiring robust thermal tolerance and substantial current handling in a TO‑220AB package.

Features and Benefits:

• 60V maximum drain‑source voltage for mid‑voltage circuits • 50A continuous drain current for heavy‑load switching • 0.018Ω Rds(on) reduces conduction losses • 190W power dissipation for sustained power handling • 110nC typical gate charge for predictable switching behaviour • 175°C maximum junction temperature for high‑temperature environments

Applications

• Suitable for motor drive stages in automation systems • Ideal for power supply switch elements in industrial equipment • Used for load switching in electrical distribution modules • Can be used for high‑current switching in mechanical control systems

What gate drive considerations are required for fast switching?

Use a driver capable of delivering sufficient Peak current to charge 110nC quickly, and observe the 20V maximum gate‑source rating to avoid overdrive.

How does thermal management affect continuous operation?

Mount on an appropriate heatsink and consider the 190W dissipation limit and 175°C maximum operating temperature when calculating thermal resistance and duty cycles.

What factors determine suitability for PCB versus chassis mounting?

The through‑hole TO‑220AB format suits both PCB mounting and isolated heatsink attachment

choose mounting based on thermal path and mechanical stress needs.

Can this device tolerate low‑temperature environments during storage and operation?

It is specified to operate down to -55°C, so ensure materials and solder processes are compatible with that lower bound.