onsemi Dual 2 Type N-Channel Small Signal, 910 mA, 20 V Enhancement, 6-Pin SC-88 NTJD4401NT1G
- RS-stocknr.:
- 184-1229
- Fabrikantnummer:
- NTJD4401NT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 100 eenheden)*
€ 13,20
(excl. BTW)
€ 16,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 2.200 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,132 | € 13,20 |
| 500 - 900 | € 0,113 | € 11,30 |
| 1000 + | € 0,098 | € 9,80 |
*prijsindicatie
- RS-stocknr.:
- 184-1229
- Fabrikantnummer:
- NTJD4401NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Small Signal | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 910mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 440mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 550mW | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Forward Voltage Vf | 0.76V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Small Signal | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 910mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 440mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 550mW | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Forward Voltage Vf 0.76V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
Small Footprint (2 x 2 mm)
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion
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