onsemi Type N-Channel MOSFET, 36 A, 650 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 189-0252
Fabrikantnummer:: NTB095N65S3HF
Fabrikant:: onsemi

onsemi Type N-Channel MOSFET, 36 A, 650 V Enhancement, 3-Pin TO-263

Subtotaal (1 rol van 800 eenheden)*

€ 2.828,00

(excl. BTW)

€ 3.421,60

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 28 april 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
800 +	€ 3,535	€ 2.828,00

*prijsindicatie

RS-stocknr.:: 189-0252
Fabrikantnummer:: NTB095N65S3HF
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	66nC
	Maximum Power Dissipation Pd	272W
	Maximum Operating Temperature	150°C
	Height	4.58mm
	Length	10.67mm
	Standards/Approvals	No
	Width	9.65 mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 66nC
	Maximum Power Dissipation Pd 272W
	Maximum Operating Temperature 150°C
	Height 4.58mm
	Length 10.67mm
	Standards/Approvals No
	Width 9.65 mm
	Automotive Standard No

Datasheet NTB095N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 66 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 80 mΩHigher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi Type N-Channel MOSFET, 36 A, 650 V Enhancement, 3-Pin TO-263

GRATIS bezorging voor bestellingen van meer dan € 75,00

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