onsemi Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-263

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Subtotaal (1 rol van 800 eenheden)*

€ 2.649,60

(excl. BTW)

€ 3.206,40

(incl. BTW)

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RS-stocknr.:
186-1271
Fabrikantnummer:
NTB110N65S3HF
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

240W

Typical Gate Charge Qg @ Vgs

62nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.67mm

Width

9.65 mm

Standards/Approvals

No

Height

4.58mm

Automotive Standard

No

Niet conform

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 62 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 98 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

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