STMicroelectronics STP12NM50 Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-263

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€ 1.896,00

(excl. BTW)

€ 2.294,00

(incl. BTW)

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RS-stocknr.:
188-8281
Fabrikantnummer:
STB12NM50T4
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

500V

Series

STP12NM50

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

160W

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.4mm

Height

4.37mm

Width

9.35 mm

Automotive Standard

No

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance.

High dv/dt and avalanche capabilities

Low input capacitance and gate charge

Tight process control and high manufacturing yields

Low gate input resistance

Applications

Switching application

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