Vishay SQS484CENW N-Channel MOSFET, 16 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SQS484CENW-T1_GE3
- RS-stocknr.:
- 200-6850
- Fabrikantnummer:
- SQS484CENW-T1_GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 200-6850
- Fabrikantnummer:
- SQS484CENW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212 | |
| Series | SQS484CENW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.4mm | |
| Standards/Approvals | No | |
| Width | 1.12mm | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212 | ||
Series SQS484CENW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Height 3.4mm | ||
Standards/Approvals No | ||
Width 1.12mm | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQS484CENW-T1_GE3 is a automotive N-channel 40V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Gerelateerde Links
- Vishay SQS484CENW N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SQS484CENW-T1_GE3
- Vishay SQS484CENW N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8W SQS484CENW-T1_BE3
- Vishay N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS142ELNW-T1_GE3
- Vishay N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS160ELNW-T1_GE3
- Vishay N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8 SQS180ELNW-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SQS486CENW-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS660CENW-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS414CENW-T1_GE3