Vishay SQS484CENW Type N-Channel MOSFET, 16 A, 40 V Enhancement, 8-Pin PowerPAK 1212
- RS-stocknr.:
- 200-6851
- Fabrikantnummer:
- SQS484CENW-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 35,30
(excl. BTW)
€ 42,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,706 | € 35,30 |
| 100 - 200 | € 0,536 | € 26,80 |
| 250 - 450 | € 0,494 | € 24,70 |
| 500 - 1200 | € 0,388 | € 19,40 |
| 1250 + | € 0,367 | € 18,35 |
*prijsindicatie
- RS-stocknr.:
- 200-6851
- Fabrikantnummer:
- SQS484CENW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212 | |
| Series | SQS484CENW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212 | ||
Series SQS484CENW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQS484CENW-T1_GE3 is a automotive N-channel 40V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
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