Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-263
	Series	NTB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	3.7V
	Maximum Power Dissipation Pd	357W
	Maximum Gate Source Voltage Vgs	25 V
	Typical Gate Charge Qg @ Vgs	106nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.7 mm
	Height	15.7mm
	Length	10.2mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-263
	Series NTB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 3.7V
	Maximum Power Dissipation Pd 357W
	Maximum Gate Source Voltage Vgs 25 V
	Typical Gate Charge Qg @ Vgs 106nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.7 mm
	Height 15.7mm
	Length 10.2mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - NTBG040N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

40mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

onsemi NTB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

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