Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	1200V
	Series	NVH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Typical Gate Charge Qg @ Vgs	56nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Maximum Operating Temperature	175°C
	Length	15.8mm
	Height	22.74mm
	Standards/Approvals	RoHS
	Width	5.2 mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 1200V
	Series NVH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Typical Gate Charge Qg @ Vgs 56nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Maximum Operating Temperature 175°C
	Length 15.8mm
	Height 22.74mm
	Standards/Approvals RoHS
	Width 5.2 mm
	Automotive Standard AEC-Q101

Datasheet - NVH4L080N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter, Automotive Auxiliary Motor Drive applications.

AEC Q101 qualified

100% avalanche tested

Low effective output capacitance

RoHS compliant

onsemi NVH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L

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