onsemi NVH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L080N120SC1
- RS-stocknr.:
- 202-5740
- Fabrikantnummer:
- NVH4L080N120SC1
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 2 eenheden)*
€ 14,92
(excl. BTW)
€ 18,06
(incl. BTW)
Voeg 12 eenheden toe voor gratis bezorging
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- Verzending 410 stuk(s) vanaf 16 februari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 7,46 | € 14,92 |
*prijsindicatie
- RS-stocknr.:
- 202-5740
- Fabrikantnummer:
- NVH4L080N120SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Length 15.8mm | ||
Height 22.74mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter, Automotive Auxiliary Motor Drive applications.
AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant
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