onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247
- RS-stocknr.:
- 202-5737
- Fabrikantnummer:
- NVH4L040N120SC1
- Fabrikant:
- onsemi
Subtotaal (1 tube van 450 eenheden)*
€ 7.165,80
(excl. BTW)
€ 8.670,60
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 450 + | € 15,924 | € 7.165,80 |
*prijsindicatie
- RS-stocknr.:
- 202-5737
- Fabrikantnummer:
- NVH4L040N120SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 319W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 170°C | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 319W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 170°C | ||
Length 15.8mm | ||
Height 22.74mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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