Fabrikantnummer

onsemi NVH N-Channel MOSFET, 17.3 A, 1.2 kV Enhancement, 4-Pin TO-247 NVH4L160N120SC1

RS-stocknr.:: 202-5743
Fabrikantnummer:: NVH4L160N120SC1
Fabrikant:: onsemi

onsemi NVH N-Channel MOSFET, 17.3 A, 1.2 kV Enhancement, 4-Pin TO-247 NVH4L160N120SC1

Bulkkorting beschikbaar

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Subtotaal (1 verpakking van 5 eenheden)*

€ 38,86

(excl. BTW)

€ 47,02

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 7,772	€ 38,86
50 +	€ 6,698	€ 33,49

*prijsindicatie

RS-stocknr.:: 202-5743
Fabrikantnummer:: NVH4L160N120SC1
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17.3A
	Maximum Drain Source Voltage Vds	1.2kV
	Series	NVH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	160mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	111W
	Maximum Gate Source Voltage Vgs	25V
	Forward Voltage Vf	4V
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Operating Temperature	175°C
	Length	15.8mm
	Height	22.74mm
	Width	5.2mm
	Standards/Approvals	AEC-Q101 and PPAP Capable
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17.3A
	Maximum Drain Source Voltage Vds 1.2kV
	Series NVH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 160mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 111W
	Maximum Gate Source Voltage Vgs 25V
	Forward Voltage Vf 4V
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Operating Temperature 175°C
	Length 15.8mm
	Height 22.74mm
	Width 5.2mm
	Standards/Approvals AEC-Q101 and PPAP Capable
	Automotive Standard AEC-Q101

Datasheet - NVH4L160N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

100% avalanche tested

Low effective output capacitance

RoHS compliant

onsemi NVH N-Channel MOSFET, 17.3 A, 1.2 kV Enhancement, 4-Pin TO-247 NVH4L160N120SC1

Bulkkorting

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

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