Vishay Dual SiZ270DT 2 Type N-Channel MOSFET, 19.1 A, 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ270DT-T1-GE3
- RS-stocknr.:
- 204-7264
- Fabrikantnummer:
- SIZ270DT-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 20 eenheden)*
€ 27,62
(excl. BTW)
€ 33,42
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 12 augustus 2027
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 1,381 | € 27,62 |
| 100 - 180 | € 1,174 | € 23,48 |
| 200 - 480 | € 0,968 | € 19,36 |
| 500 - 980 | € 0,928 | € 18,56 |
| 1000 + | € 0,906 | € 18,12 |
*prijsindicatie
- RS-stocknr.:
- 204-7264
- Fabrikantnummer:
- SIZ270DT-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19.1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiZ270DT | |
| Package Type | PowerPAIR 3 x 3S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0377Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19.1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiZ270DT | ||
Package Type PowerPAIR 3 x 3S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0377Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 100 V (D-S) MOSFETs is an integrated MOSFET half bridge power stage and has a optimized Qgs/Qgs ratio improves switching characteristics.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
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