onsemi NTMFS006N08MC Type N-Channel MOSFET, 32 A, 80 V Enhancement, 8-Pin PQFN NTMFS006N08MC
- RS-stocknr.:
- 205-2425
- Fabrikantnummer:
- NTMFS006N08MC
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 16,44
(excl. BTW)
€ 19,89
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 09 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,644 | € 16,44 |
| 100 - 240 | € 1,417 | € 14,17 |
| 250 + | € 1,229 | € 12,29 |
*prijsindicatie
- RS-stocknr.:
- 205-2425
- Fabrikantnummer:
- NTMFS006N08MC
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NTMFS006N08MC | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 78W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1 mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NTMFS006N08MC | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 78W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 5.1 mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor Power Trench series 150V N-Channel MV MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max rDS(on) = 11.5mohm at VGS is 10V, ID is 35A
Low Conduction Loss
Max rDS(on) is 13.2mohm at VGS is 8V, ID is 18A
50% lower Qrr than other mosfet suppliers
Lowers switching noise /EMI
MSL1 robust package design
100% UIL tested
Gerelateerde Links
- onsemi NTMFS006N08MC Dual N-Channel MOSFET 80 V, 8-Pin PQFN8 NTMFS006N08MC
- onsemi MOSFETs
- onsemi MOSFET NTMJS1D4N06CLTWG
- onsemi MOSFET NTBLS0D7N06C
- onsemi SiC MOSFET, 24-Pin QFN24 NCV51705MNTWG
- onsemi FOD3180S MOSFET Gate Driver, DIP
- onsemi MOSFET, 3-Pin TO-92 BS170-D26Z
- onsemi N-Channel MOSFET, 6-Pin WLCSP FPF2286UCX
