onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC
- RS-stocknr.:
- 178-4558
- Fabrikantnummer:
- FDMC007N08LCDC
- Fabrikant:
- onsemi
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
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Elk (op een haspel van 3000)
€ 4.374,00
(excl. BTW)
€ 5.292,54
(incl. BTW)
- RS-stocknr.:
- 178-4558
- Fabrikantnummer:
- FDMC007N08LCDC
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | FDMC | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series FDMC | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 0.75mm | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on on-state resistance and yet maintain in class soft body diode
Shielded Gate MOSFET Technology
Max rDS(on) = 6.8 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 17 A
5 V Drive Capable
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
MSL1 robust package design
Dualcool capable package
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drive
Solar
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