STMicroelectronics STP50N60DM6 N-Channel MOSFET, 36 A, 600 V Enhancement, 8-Pin TO-LL
- RS-stocknr.:
- 206-6072
- Fabrikantnummer:
- STP50N60DM6
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 169,80
(excl. BTW)
€ 205,45
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 200 | € 3,396 | € 169,80 |
| 250 + | € 3,285 | € 164,25 |
*prijsindicatie
- RS-stocknr.:
- 206-6072
- Fabrikantnummer:
- STP50N60DM6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-LL | |
| Series | STP50N60DM6 | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10mm | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Length | 28.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-LL | ||
Series STP50N60DM6 | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Width 10mm | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Length 28.9mm | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Gerelateerde Links
- STMicroelectronics STP50N60DM6 Type N-Channel MOSFET 600 V Enhancement, 8-Pin TO-LL STP50N60DM6
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 8-Pin TO-LL
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 8-Pin TO-LL STO65N60DM6
- STMicroelectronics N-Channel STO60 Type N-Channel MOSFET 600 V, 8-Pin TO-LL STO60N045DM9
- STMicroelectronics N-Channel STO60 Type N-Channel MOSFET 600 V, 8-Pin TO-LL STO60N030M9
- STMicroelectronics N-Channel STripFET F7 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TO-LL
- STMicroelectronics N-Channel STripFET F7 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TO-LL STO450N6F7
- STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET 600 V Enhancement, 7-Pin HU3PAK