STMicroelectronics N-Channel STO60 Type N-Channel MOSFET, 79 A, 600 V, 8-Pin TO-LL STO60N030M9
- RS-stocknr.:
- 358-978
- Fabrikantnummer:
- STO60N030M9
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 11,45
(excl. BTW)
€ 13,85
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 11,45 |
| 10 - 99 | € 10,31 |
| 100 + | € 9,50 |
*prijsindicatie
- RS-stocknr.:
- 358-978
- Fabrikantnummer:
- STO60N030M9
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Output Power | 255W | |
| Series | STO60 | |
| Package Type | TO-LL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Length | 10mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 600V | ||
Output Power 255W | ||
Series STO60 | ||
Package Type TO-LL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Length 10mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Very low FOM
Higher VDSS rating
Higher dv by dt capability
Easy to drive
100 percent avalanche tested
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