STMicroelectronics N-Channel STO60 Type N-Channel MOSFET, 79 A, 600 V, 8-Pin TO-LL STO60N030M9
- RS-stocknr.:
- 358-978
- Fabrikantnummer:
- STO60N030M9
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 12,65
(excl. BTW)
€ 15,31
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending vanaf 01 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 12,65 |
| 10 - 99 | € 11,39 |
| 100 + | € 10,50 |
*prijsindicatie
- RS-stocknr.:
- 358-978
- Fabrikantnummer:
- STO60N030M9
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Operating Frequency | 1 MHz | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Output Power | 255W | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STO60 | |
| Package Type | TO-LL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | N-Channel | |
| Height | 2.4mm | |
| Width | 11.88 mm | |
| Standards/Approvals | RoHS | |
| Length | 10mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Operating Frequency 1 MHz | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Output Power 255W | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STO60 | ||
Package Type TO-LL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration N-Channel | ||
Height 2.4mm | ||
Width 11.88 mm | ||
Standards/Approvals RoHS | ||
Length 10mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Very low FOM
Higher VDSS rating
Higher dv by dt capability
Easy to drive
100 percent avalanche tested
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