Toshiba TK090Z65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin TO-247 TK090Z65Z,S1F(O
- RS-stocknr.:
- 206-9727
- Fabrikantnummer:
- TK090Z65Z,S1F(O
- Fabrikant:
- Toshiba
Subtotaal (1 tube van 25 eenheden)*
€ 237,45
(excl. BTW)
€ 287,325
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 50 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 25 + | € 9,498 | € 237,45 |
*prijsindicatie
- RS-stocknr.:
- 206-9727
- Fabrikantnummer:
- TK090Z65Z,S1F(O
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | TK090Z65Z | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 45W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 40.96mm | |
| Standards/Approvals | No | |
| Height | 5mm | |
| Width | 15.94 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series TK090Z65Z | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 45W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 40.96mm | ||
Standards/Approvals No | ||
Height 5mm | ||
Width 15.94 mm | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.
Low drain-source on-resistance 0.075 ?
Storage temperature -55 to 150°C
Gerelateerde Links
- Toshiba TK090Z65Z Silicon N-Channel MOSFET 650 VS1F(O
- Toshiba TK090N65Z Silicon N-Channel MOSFET 650 VS1F(S
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R072M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R083M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R030M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R039M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R057M1HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R048M1HXKSA1