STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247 SCT1000N170

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  • Verzending vanaf 02 september 2026
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Verpakkingsopties
RS-stocknr.:
212-2092
Fabrikantnummer:
SCT1000N170
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

1700V

Series

SCT1000N170

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.66Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13.3nC

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

96W

Forward Voltage Vf

4.5V

Maximum Operating Temperature

200°C

Standards/Approvals

No

Length

15.75mm

Width

20.15 mm

Height

5.15mm

Automotive Standard

No

SiC MOSFET


The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.

High speed switching performance

Very fast and robust intrinsic body diode

Low capacitances

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