STMicroelectronics SCTW70N Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247

Bekijk alle MOSFETs

Subtotaal (1 tube van 30 eenheden)*

€ 1.048,26

(excl. BTW)

€ 1.268,40

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 01 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per tube*
30 +€ 34,942€ 1.048,26

*prijsindicatie

RS-stocknr.:
233-3023
Fabrikantnummer:
SCTW70N120G2V
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

1200V

Series

SCTW70N

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

2.7V

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

547W

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

200°C

Length

15.75mm

Standards/Approvals

No

Width

5.15 mm

Height

20.15mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very high operating junction temperature capability (TJ = 200 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

Gerelateerde Links