DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET, 6 A, 100 V Enhancement, 12-Pin VDFN DMHT10H032LFJ-13
- RS-stocknr.:
- 213-9147
- Fabrikantnummer:
- DMHT10H032LFJ-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 18,17
(excl. BTW)
€ 21,99
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 2.990 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,817 | € 18,17 |
| 50 - 90 | € 1,781 | € 17,81 |
| 100 - 240 | € 1,589 | € 15,89 |
| 250 - 990 | € 1,557 | € 15,57 |
| 1000 + | € 1,271 | € 12,71 |
*prijsindicatie
- RS-stocknr.:
- 213-9147
- Fabrikantnummer:
- DMHT10H032LFJ-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMHT10H032LFJ | |
| Package Type | VDFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 64W | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 0.8mm | |
| Width | 4.5 mm | |
| Standards/Approvals | AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMHT10H032LFJ | ||
Package Type VDFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 64W | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 0.8mm | ||
Width 4.5 mm | ||
Standards/Approvals AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
The DiodesZetex DMHT10H032LFJ series is a N-channel MOSFET in a H-bridge configuration.
High conversion efficiency
Fast switching speed
Gerelateerde Links
- DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET 100 V Enhancement, 12-Pin VDFN
- DiodesZetex Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin VDFN DMT6018LDR-13
- DiodesZetex Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin VDFN
- DiodesZetex Dual DMN2024UFX 1 Type N-Channel MOSFET 20 V Enhancement, 4-Pin VDFN
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 8-Pin VDFN-3030
- DiodesZetex Dual DMN2024UFX 1 Type N-Channel MOSFET 20 V Enhancement, 4-Pin VDFN DMN2024UFX-7
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 8-Pin VDFN-3030 DMT3009UDT-7
- DiodesZetex Dual 2 Type N-Channel MOSFET 8-Pin PowerDI5060-8 DMT69M9LPDW-13