Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 214-4395
- Fabrikantnummer:
- IPD80R1K4CEATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 1.077,50
(excl. BTW)
€ 1.305,00
(incl. BTW)
Voeg 2500 eenheden toe voor gratis bezorging
Op voorraad
- 2.500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,431 | € 1.077,50 |
*prijsindicatie
- RS-stocknr.:
- 214-4395
- Fabrikantnummer:
- IPD80R1K4CEATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | CoolMOS CE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.42 mm | |
| Length | 6.65mm | |
| Height | 2.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series CoolMOS CE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 6.42 mm | ||
Length 6.65mm | ||
Height 2.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
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