N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

RS-stocknr.:: 165-8015
Fabrikantnummer:: IPD80R1K0CEATMA1
Fabrikant:: Infineon

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

Prijs Elk (op een haspel van 2500)**

€ 0,449

(excl. BTW)

€ 0,543

(incl. BTW)

tijdelijk niet op voorraad – nieuwe voorraad verwacht op 04-07-2025, met een levertijd van 2 à 3 werkdagen.*

* Bezorgdata kunnen veranderen afhankelijk van de gekozen hoeveelheid en het bezorgadres.

GRATIS bezorging voor bestellingen vanaf € 75,00

Aantal stuks	Per stuk	Per rol**
2500 +	€ 0,449	€ 1.122,50

**prijsindicatie

RS-stocknr.:: 165-8015
Fabrikantnummer:: IPD80R1K0CEATMA1
Fabrikant:: Infineon

Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1

This MOSFET provides solutions for power management and general electronics, leveraging advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.

Features & Benefits

• Increased power density allows for more compact system designs
• Reduced cooling requirements lead to cost savings for systems
• Lower operating temperatures enhance system reliability
• High peak current capability supports rigorous applications
• Reliable dv/dt rating ensures stability under rapid voltage changes
• Complies with RoHS standards for environmentally sound use

Applications

• Used in LED lighting solutions for retrofit installations
• Suitable for QR flyback topology in power supplies
• Effective within automotive power distribution systems
• Ideal for various high-voltage industrial

How does the MOSFET enhance system performance in power management?

It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.

What are the benefits of using this device in LED lighting applications?

It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.

Is this compatible with high-frequency applications?

Yes, its low gate charge and high peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.

What is the maximum continuous drain current for this device?

The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.

What temperature range can it operate within?

It operates effectively between -55°C and +150°C, offering versatility across different environments.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	5.7 A
Maximum Drain Source Voltage	800 V
Series	CoolMOS™ CE
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	950 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Number of Elements per Chip	1
Length	6.73mm
Typical Gate Charge @ Vgs	31 nC @ 10 V
Maximum Operating Temperature	+150 °C
Width	6.22mm
Height	2.41mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V