Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252

RS-stocknr.:: 165-8015
Fabrikantnummer:: IPD80R1K0CEATMA1
Fabrikant:: Infineon

Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252

Subtotaal (1 rol van 2500 eenheden)*

€ 1.440,00

(excl. BTW)

€ 1.742,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 20 april 2026

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Aantal stuks	Per stuk	Per rol*
2500 +	€ 0,576	€ 1.440,00

*prijsindicatie

RS-stocknr.:: 165-8015
Fabrikantnummer:: IPD80R1K0CEATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	800V
	Series	CoolMOS CE
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	950mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	83W
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Width	6.22 mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 800V
	Series CoolMOS CE
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 950mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 83W
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Width 6.22 mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

N.v.t.

Land van herkomst:: MY

Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1

This MOSFET provides solutions for power management and general electronics, leveraging Advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.

Features & Benefits

• Increased power density allows for more Compact system designs

• Reduced cooling requirements lead to cost savings for systems

• Lower operating temperatures enhance system reliability

• High Peak current capability supports rigorous applications

• Reliable dv/dt rating ensures stability under Rapid voltage changes

• Complies with RoHS standards for environmentally sound use

Applications

• Used in LED lighting solutions for retrofit installations

• Suitable for QR flyback topology in power supplies

• Effective within automotive power distribution systems

• Ideal for various high-voltage industrial

How does the MOSFET enhance system performance in power management?

It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.

What are the benefits of using this device in LED lighting applications?

It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.

Is this compatible with high-frequency applications?

Yes, its low gate charge and high Peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.

What is the maximum continuous drain current for this device?

The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.

What temperature range can it operate within?

It operates effectively between -55°C and +150°C, offering versatility across different environments.