Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON
- RS-stocknr.:
- 214-8973
- Fabrikantnummer:
- BSC0502NSIATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 1.480,00
(excl. BTW)
€ 1.790,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 10.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,296 | € 1.480,00 |
*prijsindicatie
- RS-stocknr.:
- 214-8973
- Fabrikantnummer:
- BSC0502NSIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.65V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.65V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
Gerelateerde Links
- Infineon OptiMOS™ 5 N-Channel MOSFET 30 V, 8-Pin SuperSO8 5 x 6 BSC0502NSIATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin SuperSO8 5 x 6 BSC011N03LSTATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin SuperSO8 5 x 6 BSC034N03LSGATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 ISC0802NLSATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 ISC0803NLSATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin SuperSO8 5 x 6 BSC117N08NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 ISC0703NLSATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5ATMA1
