Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8

Bekijk alle MOSFETs

Subtotaal (1 rol van 5000 eenheden)*

€ 3.020,00

(excl. BTW)

€ 3.655,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 25 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
5000 +€ 0,604€ 3.020,00

*prijsindicatie

RS-stocknr.:
214-8976
Fabrikantnummer:
BSC0910NDIATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

25V

Package Type

TISON-8

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

0.87V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

5mm

Standards/Approvals

RoHS, IEC61249-2-21, JEDEC1

Width

6 mm

Height

1.1mm

Number of Elements per Chip

2

Automotive Standard

No

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The Dual N-channel OptiMOS MOSFETs, comes Halogen-free according to IEC61249-2-21 and Pb-free lead plating; RoHS compliant.

Monolithic integrated Schottky-like diode

Optimized for high performance buck converters

100% avalanche tested

Gerelateerde Links