Infineon CoolMOS P7 N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 IPA60R060P7XKSA1

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€ 154,65

(excl. BTW)

€ 187,15

(incl. BTW)

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50 - 50€ 3,093€ 154,65
100 - 200€ 2,939€ 146,95
250 +€ 2,753€ 137,65

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RS-stocknr.:
214-8993
Fabrikantnummer:
IPA60R060P7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS P7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

900mV

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

29W

Maximum Operating Temperature

+150°C

Standards/Approvals

No

Automotive Standard

No

Infineon CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 48A Continuous Drain Current - IPA60R060P7XKSA1


This MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in through-hole assemblies. It operates across an extended temperature range for demanding environments and is configured in enhancement-channel mode to control current flow in power circuits.

Features and Benefits:


• 600 V drain-source rating enables high-voltage switching applications
• 48 A continuous drain current supports substantial load handling
• 60 mΩ RDS(on) minimises conduction losses under normal conditions
• 29 W power dissipation permits sustained thermal loading
• 0.9 V forward voltage reduces voltage drop during conduction
• 30 V gate-source limit accommodates common gate drive voltages

Applications


• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used with heatsinking in through-hole power assemblies
• Can be used for high-voltage LED driver circuits
• Appropriate for laboratory and test-bench power electronics

What mounting option does it use?


It is supplied in a TO-220 package intended for through-hole mounting.

What polarity and operation mode should be expected?


It is an N-channel device operating in enhancement mode for gate-controlled conduction.

What thermal extremes can it withstand?


It is rated to function between −55 °C and +150 °C.

What is the maximum gate voltage that should not be exceeded?


The gate-source voltage must not exceed 30 V.

Is this component specified for automotive standard compliance?


It is not designated as an automotive-standard component.

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