Infineon OptiMOS 5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 214-9082
- Fabrikantnummer:
- IPP052N08N5AKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 86,40
(excl. BTW)
€ 104,55
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.200 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,728 | € 86,40 |
| 100 - 200 | € 1,40 | € 70,00 |
| 250 - 450 | € 1,313 | € 65,65 |
| 500 - 950 | € 1,244 | € 62,20 |
| 1000 + | € 1,192 | € 59,60 |
*prijsindicatie
- RS-stocknr.:
- 214-9082
- Fabrikantnummer:
- IPP052N08N5AKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs. These latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies.
Qualified according to JEDEC1 for target applications
100% avalanche tested
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